Hydrogenated silicon film attracts extensively attention due to its application on many kinds of microelectronic devices, such as infrared imaging system, solar cell and thin film transistor.
氢化硅薄膜由于在红外成像传感器、太阳能电池及薄膜晶体管等微电子器件中有着广泛应用前景而备受关注。
The cost of crystalline silicon and polycrystalline silicon solar cell is high steadily, amorphous silicon and amorphous silicon thin film solar cell has "optical-induced degradation".
单晶硅和多晶硅体太阳能电池成本居高不下，非晶硅和非晶硅薄膜太阳能电池又有光致衰退效应的困扰。
Polycrystalline silicon thin film solar cell by RTCVD on SSP substrate is prepared so as to simplify the process and lower the cost.
从简化步骤、降低成本的角度出发，采用快速热化学气相沉积（RTCVD）法在低纯颗粒带硅（SSP）衬底上制备出了多晶硅薄膜太阳电池。
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